SwePub
Sök i LIBRIS databas

  Extended search

id:"swepub:oai:research.chalmers.se:cbe6fda5-cfa1-41d4-997e-fed688476578"
 

Search: id:"swepub:oai:research.chalmers.se:cbe6fda5-cfa1-41d4-997e-fed688476578" > Transfer-free rapid...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist
  • Xiong, FangzhuBeijing University of Technology (author)

Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs

  • Article/chapterEnglish2023

Publisher, publication year, extent ...

  • 2023
  • electronicrdacarrier

Numbers

  • LIBRIS-ID:oai:research.chalmers.se:cbe6fda5-cfa1-41d4-997e-fed688476578
  • https://doi.org/10.1038/s41699-023-00434-9DOI
  • https://research.chalmers.se/publication/538085URI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • A technique for the transfer-free growth of 2-inch wafer-scale patterned graphene directly on GaN LED epilayers is introduced. High-quality graphene as transparent electrodes and heat spreaders is synthesized directly on GaN by PECVD at only 600 °C deposition temperature and within 3 min growth time. Co acts as both the catalyst for graphene growth and the dry etching mask for GaN mesas, which greatly improves the efficiency of the semiconductor device process. Elegantly, the graphene growth is in accordance with the shape of Co, which offers a lithography-free patterning technique of the graphene. Afterward, using our penetration etching method through the PMMA and graphene layers, the Co is peacefully removed, and in-situ Ohmic contact is achieved between the graphene and p-GaN where the contact resistivity is only 0.421 Ω cm2. The graphene sheet resistance is as low as 631.2 Ω sq−1. The device is also superior to the counterpart graphene-free LED in terms of heat spreading behavior, as evidenced by the lower junction temperature and thermal resistance. Most importantly, the developed technique produces graphene with excellent performance and is intrinsically more scalable, controllable, and semiconductor industry compatible than traditionally transferred graphene.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Sun, Jie,1977Chalmers tekniska högskola,Chalmers University of Technology,Fuzhou University(Swepub:cth)jiesu (author)
  • Tang, Peng HaoBeijing University of Technology (author)
  • Guo, WeilingBeijing University of Technology (author)
  • Dong, Y. B.Beijing University of Technology (author)
  • Du, ZaifaBeijing University of Technology (author)
  • Feng, ShiweiBeijing University of Technology (author)
  • Li, XuanBeijing University of Technology (author)
  • Beijing University of TechnologyChalmers tekniska högskola (creator_code:org_t)

Related titles

  • In:npj 2D Materials and Applications7:12397-7132

Internet link

Find in a library

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Search outside SwePub

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view