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Practical and Funda...
Practical and Fundamental Impact of Epitaxial Graphene on Quantum Metrology
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- Janssen, Tjbm (author)
- National Physical Laboratory (NPL)
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- Tzalenchuk, A.Y. (author)
- National Physical Laboratory (NPL),Royal Holloway University of London
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- Lara Avila, Samuel, 1983 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Kubatkin, Sergey, 1959 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Fal'ko, V. (author)
- Lancaster University
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(creator_code:org_t)
- 2013-10-13
- 2013
- English.
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In: Mapan - Journal of Metrology Society of India. - : Springer Science and Business Media LLC. - 0970-3950 .- 0974-9853. ; 28:4, s. 239-250
- Related links:
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http://dx.doi.org/10...
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https://research.cha...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest in the metrological community. Here was a material which was completely different from commonly used semiconductor systems and which seemed to have some uniques properties which could make it ideally suited for high-precision resistance metrology. However, measuring the QHE in graphene turned out to be not so simple as first thought. In particular the small size of exfoliated graphene samples made precision measurements difficult. This dramatically changed with the development of large-area graphene grown on SiC and in this short review paper we discuss the journey from first observation to the highest-ever precision comparison of the QHE.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- SI
- QUANTIZED HALL RESISTANCE
- quantum Hall effect
- Epitaxial graphene
- Metrology
- CAPACITANCE
- Graphene
- GAS
- GALLIUM-ARSENIDE
- STANDARD
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- ref (subject category)
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