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Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits

Zenari, M. (författare)
Università Degli Studi di Padova,University of Padua
Buffolo, M. (författare)
Università Degli Studi di Padova,University of Padua
Fornasier, M. (författare)
Università Degli Studi di Padova,University of Padua
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De Santi, C. (författare)
Università Degli Studi di Padova,University of Padua
Goyvaerts, J. (författare)
Universiteit Gent,Ghent university
Grabowski, Alexander, 1993 (författare)
Chalmers tekniska högskola,Chalmers University of Technology
Gustavsson, Johan, 1974 (författare)
Chalmers tekniska högskola,Chalmers University of Technology
Kumari, Sulakshna (författare)
Universiteit Gent,Ghent university
Stassren, A. (författare)
Interuniversity Micro-Electronics Center at Leuven
Baets, Roel G. (författare)
Universiteit Gent,Ghent university
Larsson, Anders, 1957 (författare)
Chalmers tekniska högskola,Chalmers University of Technology
Roelkens, Gunther (författare)
Universiteit Gent,Ghent university
Meneghesso, G. (författare)
Università Degli Studi di Padova,University of Padua
Zanoni, E. (författare)
Università Degli Studi di Padova,University of Padua
Meneghini, M. (författare)
Università Degli Studi di Padova,University of Padua
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 (creator_code:org_t)
SPIE, 2023
2023
Engelska.
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 12439
  • Konferensbidrag (refereegranskat)
Abstract Ämnesord
Stäng  
  • Laser diodes are of paramount importance for on-chip telecommunications applications, and a wide range of sensing devices that require near-infrared sources. In this work, the devices under test are vertical-cavity silicon-integrated lasers (VCSILs) designed for operation at 845 nm in photonic integrated circuits (PICs). We focus on the analysis of the degradation of the optical performance during aging. To investigate the reliability of the devices, we carried out several stress tests at constant current, ranging from 3.5 mA to 4.5 mA representing a highly accelerated stress condition. We observed two different degradation modes. In the first part of the experiments, the samples exhibited a worsening of the threshold current, but the sub-threshold emission was unaffected by degradation. We associated this behavior to the diffusion of impurities that, from the p-contact, were crossing the upper mirror implying a worsening of the DBR optical absorption. In the second stage of the stress test, the devices showed a higher degradation rate of the threshold current, whose variation was found to be linearly correlated to the worsening of the sub-threshold emission. We related this second degradation mode to the migration of the same impurities degrading the top DBR that, when reaching the active region of the laser, induced an increase in the non-radiative recombination rate. In addition to that, we related the two degradation modes to the change in series resistance, which was ascribed to the resistivity increment of the top DBR first and of oxide aperture afterwards.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

Nyckelord

VCSIL
Degradation
Diffusion
PICs

Publikations- och innehållstyp

kon (ämneskategori)
ref (ämneskategori)

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