Microstructural Characterization of Sulfurization Effects in Cu(In,Ga)Se2 Thin Film Solar Cells

Aboulfadl, HishamChalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden (författare)

Surface sulfurization of Cu(In,Ga)Se 2 (CIGSe) absorbers is a commonly applied technique to improve the conversion efficiency of the corresponding solar cells, via increasing the bandgap towards the heterojunction. However, the resulting device performance is understood to be highly dependent on the thermodynamic stability of the chalcogenide structure at the upper region of the absorber. The present investigation provides a high-resolution chemical analysis, using energy dispersive X-ray spectrometry and laser-pulsed atom probe tomography, to determine the sulfur incorporation and chemical re-distribution in the absorber material. The post-sulfurization treatment was performed by exposing the CIGSe surface to elemental sulfur vapor for 20 min at 500°C. Two distinct sulfur-rich phases were found at the surface of the absorber exhibiting a layered structure showing In-rich and Ga-rich zones, respectively. Furthermore, sulfur atoms were found to segregate at the absorber grain boundaries showing concentrations up to ∼7 at% with traces of diffusion outwards into the grain interior.

Keller, JanUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)janke498 (författare)
Larsen, Jes KUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)jenla503 (författare)
Thuvander, Mattias,1968Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden(Swepub:cth)matthu (författare)
Riekehr, LarsUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)larri928 (författare)
Edoff, Marika,1965-Uppsala universitet,Fasta tillståndets elektronik(Swepub:uu)maribode (författare)
Platzer Björkman, Charlotte,1976-Uppsala universitet,Fasta tillståndets elektronik(Swepub:uu)chpla516 (författare)
Chalmers tekniska högskolaChalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden (creator_code:org_t)

Ingår i:Microscopy and Microanalysis: CAMBRIDGE UNIV PRESS25:2, s. 532-5381435-81151431-9276

Av författaren/redakt...: Aboulfadl, Hisha ...; Keller, Jan; Larsen, Jes K; Thuvander, Matti ...; Riekehr, Lars; Edoff, Marika, 1 ...; visa fler...; Platzer Björkman ...; visa färre...

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