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Study of IF bandwidth of MgB2 phonon-cooled hot-electron bolometer mixers

Bevilacqua, Stella, 1981 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Cherednichenko, Serguei, 1970 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Drakinskiy, Vladimir, 1977 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Shibata, Hiroyuki (author)
Nippon Telegraph and Telephone Corporation
Tokura, Yasuhiro (author)
Nippon Telegraph and Telephone Corporation
Stake, Jan, 1971 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
2013
2013
English.
In: IEEE Transactions on Terahertz Science and Technology. - 2156-342X .- 2156-3446. ; 3:4, s. 409-415
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A noise bandwidth (NBW) of 6-7 GHz was obtained for Hot-Electron Bolometer (HEB) mixers made of 10 nm MgB2 films. A systematic investigation of the (IF) gain bandwidth as a function of the MgB2 film thickness (30 nm, 15 nm and 10 nm) is also presented. The gain bandwidth (GBW) of 3.4 GHz was measured for a 10 nm film, corresponding to a mixer time constant of 47 ps. For 10 nm films a reduction of the GBW was observed with the reduction of the critical temperature (Tc). Experimental data were analyzed using the two-temperature model. From the theoretical analysis, the electron-phonon time (τe-ph), the phonon escape time (τesc) and the electron and phonon specific heats (ce, cph) were extrapolated giving the first model for HEB mixers of MgB2 films.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Keyword

terahertz
mixers
HEB
superconductor
Bolometer
gain bandwidth

Publication and Content Type

art (subject category)
ref (subject category)

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