Nonlinear model for 40-GHz cold-FET operation

We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today's nonlinear network vector analyzers.

Raffo, A.University of Ferrara (författare)
Angelov, Iltcho,1943Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)iltcho (författare)
Vadala, V.University of Ferrara (författare)
Crupi, G.Universita degli Studi di Messina,University of Messina (författare)
Caddemi, A.Universita degli Studi di Messina,University of Messina (författare)
Vannini, G.University of Ferrara (författare)
Schreurs, DmmpKatholieke Universiteit Leuven (författare)
Katholieke Universiteit LeuvenUniversity of Ferrara (creator_code:org_t)

Ingår i:International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014

Av författaren/redakt...: Avolio, G.; Raffo, A.; Angelov, Iltcho, ...; Vadala, V.; Crupi, G.; Caddemi, A.; visa fler...; Vannini, G.; Schreurs, Dmmp; visa färre...

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