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  • Salvato, MatteoUniversita degli Studi di Roma Tor Vergata,University of Rome Tor Vergata,Istituto Nazionale di Fisica Nucleare,National Institute for Nuclear Physics (författare)

Stoichiometric Bi(2)Se(3)topological insulator ultra-thin films obtained through a new fabrication process for optoelectronic applications

  • Artikel/kapitelEngelska2020

Förlag, utgivningsår, omfång ...

  • 2020
  • Royal Society of Chemistry (RSC),2020

Nummerbeteckningar

  • LIBRIS-ID:oai:research.chalmers.se:dc92077a-370f-4cda-9b01-b23351500437
  • https://research.chalmers.se/publication/517987URI
  • https://doi.org/10.1039/d0nr02725aDOI

Kompletterande språkuppgifter

  • Språk:engelska
  • Sammanfattning på:engelska

Ingår i deldatabas

Klassifikation

  • Ämneskategori:art swepub-publicationtype
  • Ämneskategori:ref swepub-contenttype

Anmärkningar

  • A new fabrication process is developed for growing Bi(2)Se(3)topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi(2)Se(3)nanowires/nanobelts are deposited by standard catalyst free vapour-solid deposition on different substrates positioned inside a quartz tube. Then, the Bi2Se3, stuck on the inner surface of the quartz tube, is re-evaporated and deposited in the form of ultra-thin films on new substrates at a temperature below 100 degrees C, which is of relevance for flexible electronic applications. The method is new, quick, very inexpensive, easy to control and allows obtaining films with different thickness down to one quintuple layer (QL) during the same procedure. The composition and the crystal structure of both the nanowires/nanobelts and the thin films are analysed by different optical, electronic and structural techniques. For the films, scanning tunnelling spectroscopy shows that the Fermi level is positioned in the middle of the energy bandgap as a consequence of the achieved correct stoichiometry. Ultra-thin films, with thickness in the range 1-10 QLs deposited on n-doped Si substrates, show good rectifying properties suitable for their use as photodetectors in the ultra violet-visible-near infrared wavelength range.

Ämnesord och genrebeteckningar

Biuppslag (personer, institutioner, konferenser, titlar ...)

  • Scagliotti, MattiaUniversita degli Studi di Roma Tor Vergata,University of Rome Tor Vergata,Istituto Nazionale di Fisica Nucleare,National Institute for Nuclear Physics (författare)
  • De Crescenzi, MaurizioIstituto Nazionale di Fisica Nucleare,National Institute for Nuclear Physics,Universita degli Studi di Roma Tor Vergata,University of Rome Tor Vergata (författare)
  • Castrucci, PaolaUniversita degli Studi di Roma Tor Vergata,University of Rome Tor Vergata,Istituto Nazionale di Fisica Nucleare,National Institute for Nuclear Physics (författare)
  • De Matteis, FabioUniversita degli Studi di Roma Tor Vergata,University of Rome Tor Vergata (författare)
  • Crivellari, MicheleFondazione Bruno Kessler (FBK) (författare)
  • Pelli Cresi, StefanoConsiglio Nazionale delle Ricerche (CNR),National Research Council of Italy (CNR) (författare)
  • Catone, DanieleConsiglio Nazionale delle Ricerche (CNR),National Research Council of Italy (CNR) (författare)
  • Bauch, Thilo,1972Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)bauch (författare)
  • Lombardi, Floriana,1967Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)lombardi (författare)
  • Universita degli Studi di Roma Tor VergataIstituto Nazionale di Fisica Nucleare (creator_code:org_t)

Sammanhörande titlar

  • Ingår i:Nanoscale: Royal Society of Chemistry (RSC)12:23, s. 12405-124152040-33722040-3364

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  • Nanoscale (Sök värdpublikationen i LIBRIS)

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