Ag-catalyzed InAs nanowires grown on transferable graphite flakes

Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a new class of hybrid materials that hold promise for scalable nanostructured devices within opto-electronics. Here we report on high aspect ratio and stacking fault free Ag-seeded InAs nanowires grown on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle manipulator. Besides the possibilities for fabricating novel nanostructure device designs, we show how this method is used to study the parasitic growth and bicrystal match between the graphite flake and the nanowires by transmission electron microscopy.

Kanne, T.Niels Bohr Institute (författare)
Sestoft, J. E.Niels Bohr Institute (författare)
Gejl, A.Niels Bohr Institute (författare)
Zeng, Lunjie,1983Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)lunjie (författare)
Johnson, E.Niels Bohr Institute,Danmarks Tekniske Universitet,Technical University of Denmark (författare)
Olsson, Eva,1960Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)f10eva (författare)
Nygard, J.Niels Bohr Institute (författare)
Krogstrup, P.Niels Bohr Institute (författare)
Chinese Academy of SciencesNiels Bohr Institute (creator_code:org_t)

Av författaren/redakt...: Meyer-Holdt, J.; Kanne, T.; Sestoft, J. E.; Gejl, A.; Zeng, Lunjie, 19 ...; Johnson, E.; visa fler...; Olsson, Eva, 196 ...; Nygard, J.; Krogstrup, P.; visa färre...

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