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Method for measurin...
Method for measuring fracture toughness of wafer-bonded interfaces with high spatial resolution
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- Bring, Martin, 1977 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Enoksson, Peter, 1957 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sanz-Velasco, Anke, 1971 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2006
- 2006
- English.
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In: Journal of Micromechanics and Microengineering. - 1361-6439 .- 0960-1317. ; 16:6, s. 68-74
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Abstract
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- A test method for adhesion quantification with high spatial resolution of bonded areas is presented. The method is based on a three-point bend chevron test and is applicable especially for small bonded structures. Using an ordinary surface profiler the method is suitable for determining the mode I fracture toughness, K Ic , of bonded areas from 5 × 5 νm 2 to 20 × 20 νm 2 in size. The method is compared quantitatively to the double cantilever beam (DCB) test. Measurements show that the average K Ic value determined using this method is in close accordance with K Ic values measured using the DCB method but a larger spread is observed which may be dedicated to a real spatial variation of K Ic shown by the higher spatial resolution of the presented method. © 2006 IOP Publishing Ltd.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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