Sökning: WFRF:(Sanz Velasco Anke 1971) >
Method for measurin...
Method for measuring fracture toughness of wafer-bonded interfaces with high spatial resolution
-
- Bring, Martin, 1977 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Enoksson, Peter, 1957 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Sanz-Velasco, Anke, 1971 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
(creator_code:org_t)
- 2006
- 2006
- Engelska.
-
Ingår i: Journal of Micromechanics and Microengineering. - 1361-6439 .- 0960-1317. ; 16:6, s. 68-74
- Relaterad länk:
-
https://research.cha...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- A test method for adhesion quantification with high spatial resolution of bonded areas is presented. The method is based on a three-point bend chevron test and is applicable especially for small bonded structures. Using an ordinary surface profiler the method is suitable for determining the mode I fracture toughness, K Ic , of bonded areas from 5 × 5 νm 2 to 20 × 20 νm 2 in size. The method is compared quantitatively to the double cantilever beam (DCB) test. Measurements show that the average K Ic value determined using this method is in close accordance with K Ic values measured using the DCB method but a larger spread is observed which may be dedicated to a real spatial variation of K Ic shown by the higher spatial resolution of the presented method. © 2006 IOP Publishing Ltd.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas