Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts

• This study deals with the interfacial reactions and electrical properties of Ta/4H-SiCcontacts. Tantalum thin films (~100 nm) were deposited onto SiC wafer at room temperature byargon ion beam sputtering. The samples were then heated in high vacuum at 650°C, 800°C or950°C for 30 min. X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction(XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used forcharacterising the samples. Ohmic contact is formed in the studied samples after annealing at orabove 800°C even though considerable amount of metallic Ta still exists. The reaction zonepossesses a layered structure of Ta2C/Ta2C+Ta5Si3/SiC. High enough temperature is needed toprovide for sufficient interface change to tailor the contact properties.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Bearbetnings-, yt- och fogningsteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Manufacturing, Surface and Joining Technology (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)

Keyword

Depth profile

Metal contact

I-V Characteristics.

Interfacial reaction

Publication and Content Type

art (subject category)

ref (subject category)