Search: id:"swepub:oai:research.chalmers.se:f63830dc-3cf3-4501-9889-0a3ebb00549e" >
Small-Versus Large-...
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Avolio, G.Katholieke Universiteit Leuven
(author)
Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs
- Article/chapterEnglish2014
Publisher, publication year, extent ...
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Institute of Electrical and Electronics Engineers (IEEE),2014
Numbers
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LIBRIS-ID:oai:research.chalmers.se:f63830dc-3cf3-4501-9889-0a3ebb00549e
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https://doi.org/10.1109/lmwc.2014.2313478DOI
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https://research.chalmers.se/publication/200278URI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Subject category:ref swepub-contenttype
Notes
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In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15 x 300 mu m(2) pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study.
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Raffo, A.University of Ferrara
(author)
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Angelov, Iltcho,1943Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)iltcho
(author)
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Crupi, G.Universita degli Studi di Messina,University of Messina
(author)
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Caddemi, A.Universita degli Studi di Messina,University of Messina
(author)
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Vannini, G.Universita degli Studi di Messina,University of Messina
(author)
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Schreurs, DmmpKatholieke Universiteit Leuven
(author)
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Katholieke Universiteit LeuvenUniversity of Ferrara
(creator_code:org_t)
Related titles
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In:IEEE Microwave and Wireless Components Letters: Institute of Electrical and Electronics Engineers (IEEE)24:6, s. 394-3961558-17641531-1309
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