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  • Ding Yuan, Chen,1991Chalmers University of Technology,SweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden (author)

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

  • Article/chapterEnglish2022

Publisher, publication year, extent ...

  • 2022-01-25
  • IOP Publishing,2022

Numbers

  • LIBRIS-ID:oai:research.chalmers.se:f96e84a9-fbaf-4768-a956-906eab65046c
  • https://doi.org/10.1088/1361-6641/ac4b17DOI
  • https://research.chalmers.se/publication/528518URI
  • https://lup.lub.lu.se/record/6cabd4e6-8325-46c2-8f7d-df3640d2ca82URI
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-182761URI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

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  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA)Vinnova [2016-05190]; Linkoping University; Chalmers University; ABB; Epiluvac; EricssonEricsson; FMV; Gotmic; ON Semiconductor; Saab AB; SweGaN; United Monolithic Semiconductors (UMS); VINNOVAVinnova [2017-04870]; Swedish Research Council VRSwedish Research Council [2016-00889]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [EM16-0024, STP19-0008]; European Unions Horizon 2020 research and innovation program [823260]; Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation
  • The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 min) were compared in terms of interface properties and device performance. A reduction of oxygen (O) at the interface between SiN and epi-structure is detected by scanning transmission electron microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements in the sample subjected to 10 min of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9% (compared to 16% for the untreated sample), which is attributed to the reduction of O at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 min significantly improves the current dispersion uniformity from 14.5% to 1.9%. The reduced trapping effects result in a high output power of 3.4 W mm(-1) at 3 GHz (compared to 2.6 W mm(-1) for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before LPCVD of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Persson, AxelLinköpings universitet,Linköping University,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)perpe25 (author)
  • Wen, Kai-Hsin,1994Chalmers University of Technology,SweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden(Swepub:cth)kaihsin (author)
  • Sommer, DanielUnited Monolithic Semiconductors (UMS),United Monolithic Semiconductors GmbH,United Monolith Semicond GmbH, Germany (author)
  • Grunenputt, JanUnited Monolithic Semiconductors (UMS),United Monolithic Semiconductors GmbH,United Monolith Semicond GmbH, Germany (author)
  • Blanck, HerveUnited Monolithic Semiconductors (UMS),United Monolithic Semiconductors GmbH,United Monolith Semicond GmbH, Germany (author)
  • Thorsell, Mattias,1982Chalmers University of Technology,Chalmers Univ Technol, Sweden(Swepub:cth)thorsell (author)
  • Kordina, OlofSweGaN AB, Linkoping, Sweden (author)
  • Darakchieva, VanyaLinköpings universitet,Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden; Lund Univ, Sweden(Swepub:liu)vanda79 (author)
  • Persson, Per O. A.Linköping University (author)
  • Chen, Jr-TaiSweGaN AB, Linkoping, Sweden (author)
  • Rorsman, Niklas,1964Chalmers University of Technology,Chalmers Univ Technol, Sweden(Swepub:cth)rorsman (author)
  • Chalmers University of TechnologySweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden (creator_code:org_t)

Related titles

  • In:Semiconductor Science and Technology: IOP Publishing37:31361-66410268-1242

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