Search: id:"swepub:oai:research.chalmers.se:fa0a818f-cfc6-4891-96f4-dee45d71b898" >
A brief overview of...
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Yuan, G.Shanghai University
(author)
A brief overview of atomic layer deposition and etching in the semiconductor processing
- Article/chapterEnglish2016
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LIBRIS-ID:oai:research.chalmers.se:fa0a818f-cfc6-4891-96f4-dee45d71b898
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ISBN:9781509013968
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https://research.chalmers.se/publication/246273URI
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https://doi.org/10.1109/ICEPT.2016.7583377DOI
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Language:English
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Summary in:English
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Subject category:kon swepub-publicationtype
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Subject category:ref swepub-contenttype
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Atomic layer deposition (ALD) and atomic layer etching (ALE) are two important techniques in the semiconductor processing, which focus ultra-Thin film deposition and etching, respectively. Both of them have the self-limiting surface behavior, and could realize the atomic-scale fidelity in the deposition and etching processes. Unlike traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD has good step coverage, atomic-scale thickness controllability, and composition uniformity at low growth temperature. Compared with traditional continuous-wave plasma etching, ALE has smooth surface, excellent depth uniformity and atomic-scale thickness controllability. In this review, their fundamental and applications have been discussed.
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Wang, N.Shanghai University
(author)
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Huang, ShirongShanghai University
(author)
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Liu, Johan,1960Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jliu
(author)
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Shanghai UniversityChalmers tekniska högskola
(creator_code:org_t)
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In:2016 17th International Conference on Electronic Packaging Technology, ICEPT 2016, s. 1365-13689781509013968
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