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- Yuan, G.Shanghai University (author)
A brief overview of atomic layer deposition and etching in the semiconductor processing
- Article/chapterEnglish2016
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- 2016
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- LIBRIS-ID:oai:research.chalmers.se:fa0a818f-cfc6-4891-96f4-dee45d71b898
- ISBN:9781509013968
- https://research.chalmers.se/publication/246273URI
- https://doi.org/10.1109/ICEPT.2016.7583377DOI
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- Language:English
- Summary in:English
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- Atomic layer deposition (ALD) and atomic layer etching (ALE) are two important techniques in the semiconductor processing, which focus ultra-Thin film deposition and etching, respectively. Both of them have the self-limiting surface behavior, and could realize the atomic-scale fidelity in the deposition and etching processes. Unlike traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD has good step coverage, atomic-scale thickness controllability, and composition uniformity at low growth temperature. Compared with traditional continuous-wave plasma etching, ALE has smooth surface, excellent depth uniformity and atomic-scale thickness controllability. In this review, their fundamental and applications have been discussed.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Materialteknik Annan materialteknik hsv//swe
- ENGINEERING AND TECHNOLOGY Materials Engineering Other Materials Engineering hsv//eng
- self-limiting behavior
- atomic layer deposition
- semiconductor processing
- atomic layer etching
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- Wang, N.Shanghai University (author)
- Huang, ShirongShanghai University (author)
- Liu, Johan,1960Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jliu (author)
- Shanghai UniversityChalmers tekniska högskola (creator_code:org_t)
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- In:2016 17th International Conference on Electronic Packaging Technology, ICEPT 2016, s. 1365-13689781509013968
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