Electrically conductive thermal interface materials based on vertically aligned carbon nanotubes mats

In power microelectronics, the trends towards miniaturization and higher performances result in higher power densities and more heat to be dissipated. In most electronic assembly, thermal interface materials (TIM) help provide a path for heat dissipation but still represent a bottleneck in the total thermal resistance of the system. VA-CNTs mats are typically grown on HR silicon substrate with Al2O3 diffusion barrier layer using Thermal CVD process. In many cases, 'die attach' thermal interface materials need to be electrically conductive and the growth of dense VA-CNT mats on an electrically conductive substrate remains a challenge. This paper presents the growth of dense VA-CNT mats on doped silicon with Al2O3 and TiN diffusion barrier layer. Processes, thermal and electrical characterization of VA-CNTs based thermal interface materials are studied and reported.

Sun, Shuangxi,1986Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)shuangxi (author)
Jiang, Di,1983Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)djiang (author)
Cibien, G.Thales Group (author)
Leveugle, E.M.Thales Group (author)
Galindo, C.Thales Group (author)
Ziaei, A.Thales Group (author)
Ye, L.SHT Smart High-Tech AB (author)
Fu, Yifeng,1984SHT Smart High-Tech AB(Swepub:cth)yifeng (author)
Bai, J.Ecole Centrale Paris (author)
Liu, Johan,1960Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jliu (author)
Thales GroupEcole Centrale Paris (creator_code:org_t)

In:IEEE 20th International Workshop on Thermal Investigation of ICs and Systems (Therminic). Greenwich, London, United Kingdom, 24-26 September 20149781479954155

By the author/editor: Daon, J.; Sun, Shuangxi, 1 ...; Jiang, Di, 1983; Cibien, G.; Leveugle, E.M.; Galindo, C.; show more...; Ziaei, A.; Ye, L.; Fu, Yifeng, 1984; Bai, J.; Liu, Johan, 1960; show less...

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