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- Song, Yuxin,1981Chalmers tekniska högskola,Chalmers University of Technology (author)
Dilute Bismides for Mid-IR Applications
- Article/chapterEnglish2013
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- 2013-09-10
- New York, NY :Springer New York,2013
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- LIBRIS-ID:oai:research.chalmers.se:fcee0384-231e-4079-b912-1f8584860020
- ISBN:9781461481218
- https://research.chalmers.se/publication/504301URI
- https://doi.org/10.1007/978-1-4614-8121-8_1DOI
- https://research.chalmers.se/publication/185308URI
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- Language:English
- Summary in:English
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- Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in mid-infrared (Mid-IR) optoelectronics. In this chapter, we review recent progresses on epitaxy and characterizations of novel bismides, i.e., GaSb1−x Bi x , InSb1 − x Bi x , InAs1 − x Bi x , and InAsSbBi. Although these dilute bismides have been successfully grown, to obtain high Bi incorporations and retain high crystal quality is still very challenging.
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- Gu, Yi (author)
- Shao, Jun (author)
- Wang, Shu Min,1963Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)shumin (author)
- Chalmers tekniska högskola (creator_code:org_t)
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- In:Springer Series in Materials ScienceNew York, NY : Springer New York186, s. 1-272196-28120933-033X9781461481218
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