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Nitrogen incorporat...
Nitrogen incorporation in GaNas layers grown by molecular beam epitaxy
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- Zhao, Qingxiang, 1962 (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),Göteborg University
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- Wang, Shu Min, 1963 (author)
- Göteborg University,Chalmers tekniska högskola,Chalmers University of Technology
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- Sadeghi, Mahdad, 1964 (author)
- Göteborg University,Chalmers tekniska högskola,Chalmers University of Technology
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- Larsson, Anders, 1957 (author)
- Göteborg University,Chalmers tekniska högskola,Chalmers University of Technology
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- Friesel, Milan, 1948 (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Göteborg University
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- Willander, Magnus, 1948- (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Göteborg University
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- Zhao, Qing Xiang, 1962 (author)
- Göteborgs universitet,University of Gothenburg
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(creator_code:org_t)
- AIP Publishing, 2006
- 2006
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:3, s. 31907-1-31907-3
- Related links:
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http://dx.doi.org/10...
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https://urn.kb.se/re...
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Abstract
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- GaNAs/GaAs quantum wells with high N concentrations, grown by molecular beam epitaxy, have been investigated by secondary-ion mass spectrometry (SIMS), high resolution x-ray diffraction (XRD), and photoluminescence (PL) measurements. The substitutional N concentration in an 18 nm thick strained GaNAs layer varies from 1.4% to 5.9% when the growth rate is reduced from 1 to 0.2 μm/h. By further reducing the growth rate, more N can be incorporated but relaxation occurs. Both the total N concentration, deduced from SIMS measurements, and the substitutional N concentration, deduced from XRD measurements, increase with reduced growth rate. By comparing the SIMS and XRD results, we found that a large amount of N was not in substitutional position when the substitutional N concentration is high (≫4%). The experimental results also show that there is no detectable change of total and substitutional N concentrations, within the instrument resolutions, after rapid thermal annealing at 700 °C for 30 s. However, PL measurements show a strong blueshift of the emission wavelength after annealing and the PL intensity increases by more than one order of magnitude.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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Zhao, Qingxiang, ...
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Wang, Shu Min, 1 ...
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Sadeghi, Mahdad, ...
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Larsson, Anders, ...
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Friesel, Milan, ...
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Willander, Magnu ...
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Zhao, Qing Xiang ...
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Telecommunicatio ...
- Articles in the publication
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Applied Physics ...
- By the university
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Linköping University
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University of Gothenburg
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Chalmers University of Technology