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Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN : Si

Araujo, C. M. (author)
Moysés Araújo, C., Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil
Fernandez, J. R. L. (author)
Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil
da Silva, A. F. (author)
Ferreira Da Silva, A., Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil
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Pepe, I. (author)
Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil
Leite, J. R. (author)
Sernelius, Bo (author)
Linköpings universitet,Tekniska högskolan,Teoretisk Fysik
Tabata, A. (author)
Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil
Persson, Clas (author)
Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden
Ahuja, R. (author)
Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden
As, D. J. (author)
Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany
Schikora, D. (author)
Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany
Lischka, K. (author)
Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany
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Moysés Araújo, C, Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil (creator_code:org_t)
2002
2002
English.
In: Microelectronics Journal. - 0026-2692. ; 33:4, s. 365-369
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, N-c, for the metal-nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition, The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest.

Keyword

resistivity
metal-nonmetal transition
band-gap shift
photoluminescence
nitrides
si-p,bi
shift
donor
TECHNOLOGY

Publication and Content Type

ref (subject category)
art (subject category)

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