Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

↓ Direkt till sidans innehåll
↓ Direkt till sidans sekundära innehåll (sidomenyn)

Sökning: WFRF:(Östling Mikael) > (2015-2019) > Integration and Hig...

1 av 147
Föregående post
Nästa post
Till träfflistan

LIBRIS Formathandbok (Information om MARC21)

Fältnamn	Indikatorer	Metadata
000		03175naa a2200421 4500
001		oai:DiVA.org:kth-210461
003		SwePub
008		170706s2017 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2104612 URI
024	7	a https://doi.org/10.1007/s11664-017-5447-32 DOI
040		a (SwePub)kth
041		a engb eng
042		9 SwePub
072	7	a ref2 swepub-contenttype
072	7	a art2 swepub-publicationtype
100	1	a Ekström, Mattiasu KTH,Elektronik4 aut0 (Swepub:kth)u1l6zf9x
245	1 0	a Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide
264		c 2017-03-20
264	1	b SPRINGER,c 2017
338		a print2 rdacarrier
500		a QC 20170706
520		a 4H-SiC electronics can operate at high temperature (HT), e.g., 300A degrees C to 500A degrees C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P-E hysteresis loops measured at room temperature showed maximum 2P (r) of 48 mu C/cm(2), large enough for wide read margins. P-E loops were measurable up to 450A degrees C, with losses limiting measurements above 450A degrees C. The phase-transition temperature was determined to be about 660A degrees C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.
650	7	a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng
653		a Ferroelectric
653		a high temperature (HT)
653		a memory device
653		a silicon carbide (4H-SiC)
653		a thin film
653		a vanadium-doped bismuth titanate (BiTV)
700	1	a Khartsev, Sergiyu KTH,Elektronik4 aut0 (Swepub:kth)u1barex4
700	1	a Östling, Mikaelu KTH,Elektronik4 aut0 (Swepub:kth)u1u0kle4
700	1	a Zetterling, Carl-Mikael,d 1966-u KTH,Elektronik4 aut0 (Swepub:kth)u15o61ns
710	2	a KTHb Elektronik4 org
773	0	t Journal of Electronic Materialsd : SPRINGERg 46:7, s. 4478-4484q 46:7<4478-4484x 0361-5235x 1543-186X
856	4	u https://doi.org/10.1007/s11664-017-5447-3y Fulltext
856	4 8	u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-210461
856	4 8	u https://doi.org/10.1007/s11664-017-5447-3

Hitta via bibliotek

Journal of Electronic Materials (Sök värdpublikationen i LIBRIS)

Till lärosätets databas

1 av 147
Föregående post
Nästa post
Till träfflistan

Hitta mer i SwePub

Av författaren/redakt...: Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl ...

Om ämnet

TEKNIK OCH TEKNOLOGIER: TEKNIK OCH TEKNO ...; och Elektroteknik oc ...

Artiklar i publikationen: Journal of Elect ...

Av lärosätet: Kungliga Tekniska Högskolan

Sök utanför SwePub

Sök vidare i:: Google; Google Book Search; Google Scholar

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

LIBRIS.kb.se