Sökning: WFRF:(Östling Mikael) > (2015-2019) > Integration and Hig...
Fältnamn | Indikatorer | Metadata |
---|---|---|
000 | 03175naa a2200421 4500 | |
001 | oai:DiVA.org:kth-210461 | |
003 | SwePub | |
008 | 170706s2017 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2104612 URI |
024 | 7 | a https://doi.org/10.1007/s11664-017-5447-32 DOI |
040 | a (SwePub)kth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Ekström, Mattiasu KTH,Elektronik4 aut0 (Swepub:kth)u1l6zf9x |
245 | 1 0 | a Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide |
264 | c 2017-03-20 | |
264 | 1 | b SPRINGER,c 2017 |
338 | a print2 rdacarrier | |
500 | a QC 20170706 | |
520 | a 4H-SiC electronics can operate at high temperature (HT), e.g., 300A degrees C to 500A degrees C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P-E hysteresis loops measured at room temperature showed maximum 2P (r) of 48 mu C/cm(2), large enough for wide read margins. P-E loops were measurable up to 450A degrees C, with losses limiting measurements above 450A degrees C. The phase-transition temperature was determined to be about 660A degrees C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics. | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng |
653 | a Ferroelectric | |
653 | a high temperature (HT) | |
653 | a memory device | |
653 | a silicon carbide (4H-SiC) | |
653 | a thin film | |
653 | a vanadium-doped bismuth titanate (BiTV) | |
700 | 1 | a Khartsev, Sergiyu KTH,Elektronik4 aut0 (Swepub:kth)u1barex4 |
700 | 1 | a Östling, Mikaelu KTH,Elektronik4 aut0 (Swepub:kth)u1u0kle4 |
700 | 1 | a Zetterling, Carl-Mikael,d 1966-u KTH,Elektronik4 aut0 (Swepub:kth)u15o61ns |
710 | 2 | a KTHb Elektronik4 org |
773 | 0 | t Journal of Electronic Materialsd : SPRINGERg 46:7, s. 4478-4484q 46:7<4478-4484x 0361-5235x 1543-186X |
856 | 4 | u https://doi.org/10.1007/s11664-017-5447-3y Fulltext |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-210461 |
856 | 4 8 | u https://doi.org/10.1007/s11664-017-5447-3 |
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