Sökning: WFRF:(Bengtsson Jörgen 1968) > Integration of sili...
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000 | 03243naa a2200397 4500 | |
001 | oai:research.chalmers.se:b5e03f0c-a9aa-46a2-a102-0a403c1b71e1 | |
003 | SwePub | |
008 | 171006s1999 | |||||||||||000 ||eng| | |
024 | 7 | a https://research.chalmers.se/publication/177682 URI |
040 | a (SwePub)cth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a kon2 swepub-publicationtype |
072 | 7 | a ref2 swepub-contenttype |
100 | 1 | a Bengtsson, Stefan,d 1961u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)stefanb |
245 | 1 0 | a Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials |
264 | 1 | c 1999 |
520 | a Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng |
653 | a surface topography | |
653 | a elemental semiconductors | |
653 | a buried layers | |
653 | a aluminium compounds | |
653 | a wafer bonding | |
653 | a diamond | |
653 | a silicon-on-insulator | |
700 | 1 | a Bergh, Mats,d 1968u Chalmers tekniska högskola,Chalmers University of Technology4 aut |
700 | 1 | a Soderbarg, Anders4 aut |
700 | 1 | a Edholm, Bengt4 aut |
700 | 1 | a Olsson, Jörgen4 aut |
700 | 1 | a Ericsson, Per,d 1968u Chalmers tekniska högskola,Chalmers University of Technology4 aut |
700 | 1 | a Tiensuu, Stefan4 aut |
710 | 2 | a Chalmers tekniska högskola4 org |
773 | 0 | t conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.g , s. 133-q <133- |
856 | 4 8 | u https://research.chalmers.se/publication/17768 |
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