Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials

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Fältnamn	Indikatorer	Metadata
000		03243naa a2200397 4500
001		oai:research.chalmers.se:b5e03f0c-a9aa-46a2-a102-0a403c1b71e1
003		SwePub
008		171006s1999 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://research.chalmers.se/publication/177682 URI
040		a (SwePub)cth
041		a engb eng
042		9 SwePub
072	7	a kon2 swepub-publicationtype
072	7	a ref2 swepub-contenttype
100	1	a Bengtsson, Stefan,d 1961u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)stefanb
245	1 0	a Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
264	1	c 1999
520		a Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated
650	7	a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng
653		a surface topography
653		a elemental semiconductors
653		a buried layers
653		a aluminium compounds
653		a wafer bonding
653		a diamond
653		a silicon-on-insulator
700	1	a Bergh, Mats,d 1968u Chalmers tekniska högskola,Chalmers University of Technology4 aut
700	1	a Soderbarg, Anders4 aut
700	1	a Edholm, Bengt4 aut
700	1	a Olsson, Jörgen4 aut
700	1	a Ericsson, Per,d 1968u Chalmers tekniska högskola,Chalmers University of Technology4 aut
700	1	a Tiensuu, Stefan4 aut
710	2	a Chalmers tekniska högskola4 org
773	0	t conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.g , s. 133-q <133-
856	4 8	u https://research.chalmers.se/publication/17768

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