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Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs

Ghandi, Reza (author)
KTH,Integrerade komponenter och kretsar
Domeij, Martin (author)
KTH,Integrerade komponenter och kretsar
Esteve, R. (author)
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Buono, Benedetto (author)
KTH,Integrerade komponenter och kretsar
Schoner, A. (author)
Han, J. (author)
Dimitrijev, S. (author)
Reshanov, S. A. (author)
Zetterling, Carl -Mikael (author)
KTH,Integrerade komponenter och kretsar
Östling, Mikael (author)
KTH,Integrerade komponenter och kretsar
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 (creator_code:org_t)
2010
2010
English.
In: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 645-648:Part 1-2, s. 661-664
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 degrees C during 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

Surface passivation
Bipolar Junction Transistors (BJT)
4H-SiC
Materials science
Teknisk materialvetenskap

Publication and Content Type

ref (subject category)
art (subject category)

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