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  • Cheng, Q.Hunan Univ, Coll Mat Sci & Engn, Ctr High Resolut Electron Microscopy, Changsha 410082, Peoples R China. (author)

Unveiling anneal hardening in dilute Al-doped AlxCoCrFeMnNi (x=0, 0.1) high-entropy alloys

  • Article/chapterEnglish2021

Publisher, publication year, extent ...

  • Elsevier BV,2021
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-303031
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-303031URI
  • https://doi.org/10.1016/j.jmst.2021.02.053DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20220309
  • Anneal hardening has been one of the approaches to improve mechanical properties of solid solution alloys with the face-centered cubic (FCC) structure, whereby a considerable strengthening can be attained by annealing of cold-worked alloys below the recrystallization temperature (T-rx). Microscopically, this hardening effect has been ascribed to several mechanisms, i.e. solute segregation to defects (dislocation and stacking fault) and short-range chemical ordering, etc. However, none of these mechanisms can well explain the anneal hardening recently observed in phase-pure and coarse-grained FCC-structured high-entropy alloys (HEAs). Here we report the observations, using high-resolution electron channeling contrast imaging and transmission electron microscopy, of profuse and stable dislocation substructures in a cold-rolled CoCrFeMnNi HEA subject to an annealing below T-rx. The dislocation substructures are observed to be thermally stable up to T-rx, which could arise from the chemical complexity of the high-entropy system where certain elemental diffusion retardation occurs. The microstructure feature is markedly different from that of conventional dilute solid solution alloys, in which dislocation substructures gradually vanish by recovery during annealing, leading to a strength drop. Furthermore, dilute addition of 2 at.% Al leads to a reduction in both microhardness and yield strength of the cold-rolled and subsequently annealed (<= 500 degrees C) HEA. This Al induced softening effect, could be associated with the anisotropic formation of dislocation substructure, resulting from enhanced dislocation planar slip due to glide plane softening effect. These findings suggest that the strength of HEAs can be tailored through the anneal hardening effect from dislocation substructure strengthening.

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Added entries (persons, corporate bodies, meetings, titles ...)

  • Xu, X. D.Hunan Univ, Coll Mat Sci & Engn, Ctr High Resolut Electron Microscopy, Changsha 410082, Peoples R China. (author)
  • Xie, P.Hunan Univ, Coll Mat Sci & Engn, Ctr High Resolut Electron Microscopy, Changsha 410082, Peoples R China. (author)
  • Han, L. L.Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China. (author)
  • He, J. Y.Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China. (author)
  • Li, XiaoqingKTH,Egenskaper(Swepub:kth)u1ycjcd5 (author)
  • Zhang, J.Hunan Univ, Coll Mat Sci & Engn, Ctr High Resolut Electron Microscopy, Changsha 410082, Peoples R China. (author)
  • Li, Z. T.Hunan Univ, Coll Mat Sci & Engn, Ctr High Resolut Electron Microscopy, Changsha 410082, Peoples R China. (author)
  • Li, Y. P.Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China. (author)
  • Liu, B.Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China. (author)
  • Nieh, T. G.Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA. (author)
  • Chen, M. W.Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21214 USA. (author)
  • Chen, J. H.Hunan Univ, Coll Mat Sci & Engn, Ctr High Resolut Electron Microscopy, Changsha 410082, Peoples R China. (author)
  • Hunan Univ, Coll Mat Sci & Engn, Ctr High Resolut Electron Microscopy, Changsha 410082, Peoples R China.Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China. (creator_code:org_t)

Related titles

  • In:Journal of Materials Science & Technology: Elsevier BV91, s. 270-2771005-0302

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