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A fully integrated ...
A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier
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- Cijvat, Pieternella (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Sjöland, Henrik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Cijvat, Ellie (author)
- Lund University
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(creator_code:org_t)
- IEEE Press, 2003
- 2003
- English 4 s.
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In: Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2003.. - : IEEE Press. - 0780381637 ; , s. 1094-1097
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Abstract
Subject headings
Close
- A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technology. It is intended for medium output power ranges such as Bluetooth class 1, and has an operating frequency of 2.45 GHz. By using two parallel output stages that can be switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output power is 22.7 dBm, while the maximum power-added efficiency is 22%.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)
Keyword
- wireless communication
- frequency doubling
- transmitter
- Power amplifier
Publication and Content Type
- kon (subject category)
- ref (subject category)
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