Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka-and Q-Band LNAs

We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for Ka-and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging between 30 and 50 mu text{m} exhibit unstable cryogenic behavior with jumps in drain current and discontinuous peaks in transconductance. We also find that shorter gate length enhances the cryogenic instability. We demonstrate that the instability of two-finger transistors can be suppressed by either adding a source air bridge, connecting the back end of gates, or increasing the gate resistance. A three-stage 24-40 GHz and a four-stage 28-52-GHz monolithic microwave-integrated circuit LNA using the stabilized InP HEMTs are presented. The Ka-band amplifier achieves a minimum noise temperature of 7 K at 25.6 GHz with an average noise temperature of 10.6 K at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB. The Q-band amplifier exhibits minimum noise temperature of 6.7 K at 32.8 GHz with average noise temperature of 10 K at ambient temperature of 5.5 K. The amplifier gain is 34 dB ± 0.8 dB. To our knowledge, the Ka-and Q-band amplifiers demonstrate the lowest noise temperature reported so far for InP cryogenic LNAs. © 1963-2012 IEEE.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
cryogenics
InP HEMT
low-noise amplifier (LNA)
monolithic microwave-integrated circuit (MMIC)
stability
wideband
Chromium compounds
Convergence of numerical methods
Drain current
High electron mobility transistors
III-V semiconductors
Indium compounds
Indium phosphide
Logic gates
Microwave integrated circuits
Monolithic integrated circuits
Monolithic microwave integrated circuits
Semiconducting indium
Semiconducting indium compounds
Semiconducting indium phosphide
Semiconductor materials
Temperature
Transconductance
Cryogenic operations
Cryogenic stability
Gate resistance
Monolithic microwave integrated circuits (MMIC)
Noise temperature
Ultra low noise
Wide-band
Low noise amplifiers

Moschetti, GiuseppeChalmers University of Technology, Sweden (author)
Wadefalk, NiklasLow Noise Factory AB, Sweden (author)
Nilsson, Per ÅkeChalmers University of Technology, Sweden (author)
Bevilacqua, StellaRISE (author)
Pourkabirian, ArsalanLow Noise Factory AB, Sweden (author)
Starski, PiotrChalmers University of Technology, Sweden (author)
Grahn, Jan V.Chalmers University of Technology, Sweden (author)
Chalmers University of Technology, SwedenLow Noise Factory AB, Sweden (creator_code:org_t)

In:IEEE transactions on microwave theory and techniques: Institute of Electrical and Electronics Engineers Inc.65:12, s. 5171-51800018-94801557-9670

By the author/editor: Cha, Eunjung; Moschetti, Giuse ...; Wadefalk, Niklas; Nilsson, Per Åke; Bevilacqua, Stel ...; Pourkabirian, Ar ...; show more...; Starski, Piotr; Grahn, Jan V.; show less...

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