Sökning: WFRF:(Gran T) > (2005-2009) > Scanning spreading ...
Fältnamn | Indikatorer | Metadata |
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000 | 02617naa a2200349 4500 | |
001 | oai:DiVA.org:kth-16238 | |
003 | SwePub | |
008 | 100805s2006 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-162382 URI |
024 | 7 | a https://doi.org/10.1016/j.nimb.2006.10.0502 DOI |
040 | a (SwePub)kth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Suchodolskis, Arturasu KTH,Mikroelektronik och Informationsteknik, IMIT4 aut0 (Swepub:kth)u11cur46 |
245 | 1 0 | a Scanning spreading resistance microscopy of shallow doping profiles in silicon |
264 | 1 | b Elsevier BV,c 2006 |
338 | a print2 rdacarrier | |
500 | a QC 20100525 QC 20110929. Conference: Symposium on Si-Bases Materials for Advanced Microelectronic Devices held at the 2006 E-MRS Spring Meeting. Nice, FRANCE. MAY 29-JUN 02, 2006 | |
520 | a We demonstrate the application of scanning spreading resistance microscopy (SSRM) for characterization of shallow highly-conductive layers formed by boron implantation of lowly doped n-type silicon substrate followed by a post-implantation annealing. The electrically active dopant concentration versus depth was obtained from a cross-section of freshly cleaved samples where the Si-surface could be clearly distinguished by depositing a SiO2-layer before cleavage. To quantify free carrier concentration we calibrated our data against samples with implanted/annealed boron profiles established by secondary ion mass spectrometry (SIMS). A good fit of SSRM and SIMS data is possible for free carrier concentrations lower than 10(20) cm(-3), but for higher concentrations there is a discrepancy indicating an incomplete activation of the boron. | |
650 | 7 | a NATURVETENSKAPx Data- och informationsvetenskap0 (SwePub)1022 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Computer and Information Sciences0 (SwePub)1022 hsv//eng |
653 | a contact | |
700 | 1 | a Hallén, Anders.u KTH,Mikroelektronik och Informationsteknik, IMIT4 aut0 (Swepub:kth)u11ywmz1 |
700 | 1 | a Gran, J.4 aut |
700 | 1 | a Hansen, T. E.4 aut |
700 | 1 | a Karlsson, Ulf O.u KTH,Mikroelektronik och Informationsteknik, IMIT4 aut0 (Swepub:kth)u19hnak8 |
710 | 2 | a KTHb Mikroelektronik och Informationsteknik, IMIT4 org |
773 | 0 | t Nuclear Instruments and Methods in Physics Research Section Bd : Elsevier BVg 253:02-jan, s. 141-144q 253:02-jan<141-144x 0168-583Xx 1872-9584 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-16238 |
856 | 4 8 | u https://doi.org/10.1016/j.nimb.2006.10.050 |
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