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Electrical Charge S...
Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device
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- Widmann, Matthias (author)
- Univ Stuttgart, Germany
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- Niethammer, Matthias (author)
- Univ Stuttgart, Germany
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- Fedyanin, Dmitry Yu. (author)
- Moscow Inst Phys and Technol, Russia
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- Khramtsov, Igor A. (author)
- Moscow Inst Phys and Technol, Russia
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- Rendler, Torsten (author)
- Univ Stuttgart, Germany
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- Booker, Ian Don (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Ul-Hassan, Jawad (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Morioka, Naoya (author)
- Univ Stuttgart, Germany
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- Chen, Yu-Chen (author)
- Univ Stuttgart, Germany
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- Ivanov, Ivan Gueorguiev (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Nguyen, Son Tien (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Ohshima, Takeshi (author)
- Natl Inst Quantum and Radiol Sci and Technol, Japan
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- Bockstedte, Michel (author)
- Univ Salzburg, Austria; Univ Erlangen Nurnberg, Germany
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- Gali, Adam (author)
- Hungarian Acad Sci, Hungary; Budapest Univ Technol and Econ, Hungary
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- Bonato, Cristian (author)
- Heriot Watt Univ, Scotland
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- Lee, Sang-Yun (author)
- Univ Stuttgart, Germany; Korea Inst Sci and Technol, South Korea
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- Wrachtrup, Joerg (author)
- Univ Stuttgart, Germany
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(creator_code:org_t)
- 2019-09-18
- 2019
- English.
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In: Nano letters (Print). - : AMER CHEMICAL SOC. - 1530-6984 .- 1530-6992. ; 19:10, s. 7173-7180
- Related links:
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http://arxiv.org/pdf...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the color center in an integrated silicon carbide optoelectronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active color centers for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- materials science; nanotechnology; semiconductors; multidisciplinary
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Widmann, Matthia ...
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Niethammer, Matt ...
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Fedyanin, Dmitry ...
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Khramtsov, Igor ...
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Rendler, Torsten
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Booker, Ian Don
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show more...
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Ul-Hassan, Jawad
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Morioka, Naoya
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Chen, Yu-Chen
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Ivanov, Ivan Gue ...
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Nguyen, Son Tien
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Ohshima, Takeshi
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Bockstedte, Mich ...
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Gali, Adam
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Bonato, Cristian
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Lee, Sang-Yun
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Wrachtrup, Joerg
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- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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Nano letters (Pr ...
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Linköping University