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Reflectance differe...
Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap
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- Lastras-Martínez, L. F. (författare)
- Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
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- Santos, P. V. (författare)
- Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
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- Rönnow, Daniel (författare)
- Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
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- Cardona, M. (författare)
- Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
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- Specht, P. (författare)
- Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
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- Eberl, K. (författare)
- Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
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(creator_code:org_t)
- 1998
- 1998
- Engelska.
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Ingår i: Physica status solidi. A, Applied research. - 0031-8965 .- 1521-396X. ; 170:2, s. 317-321
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- We report Reflectance Difference (RD) measurement on (001) GaAs surface quantum wells (QW) under Ultra High Vacuum (UHV) conditions from 1.7 to 5.0eV. The QW is embedded between an arsenic-rich reconstructed GaAs surface and an AlAs barrier. The samples, grown by MBE with a protective arsenic cap layer, were heated to 320 and 430°C to desorb the As layer and form c(4 x 4) and (2 x 4) surface reconstructions, respectively. By modifying the surface reconstructure, we are able to separate the contributions to the optical anisotropy from the surface region (mainly associated with the As dimers) from those originating below the surface.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Energy gap; Molecular beam epitaxy; Reflection; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor growth; Spectroscopy; Surface treatment
- Aluminum arsenide; Optical anisotropy; Reflectance difference spectroscopy
- Semiconductor quantum wells
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- art (ämneskategori)
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