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Grain structure influence on synchronized two-dimensional spin-Hall nano-oscillators

Capriata, Corrado Carlo Maria (author)
KTH,Elektronik och inbyggda system
Malm, Bengt Gunnar, 1972- (author)
KTH,Elektronik och inbyggda system
 (creator_code:org_t)
AIP Publishing, 2023
2023
English.
In: AIP Advances. - : AIP Publishing. - 2158-3226. ; 13:5
  • Journal article (peer-reviewed)
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  • Nanoconstriction spin-Hall nano-oscillators (NC-SHNOs) are excellent devices for a wide variety of applications, from RF communication to bio-inspired computing. NC-SHNOs are easy to fabricate in large arrays, are CMOS compatible, and feature a narrow linewidth and high output power. However, in order to take full advantage of the device capabilities, a systematic analysis of the array behavior with respect to the number and dimensions of oscillators, the temperature of operation, and the influence of layer quality is needed. Here, we focus on micromagnetic simulations of 2 x 2 and 4 x 4 NC-SHNO arrays with single oscillators separated by up to 300 nm. We observe a synchronization scheme that allows for column-wise selection of the oscillation frequency for a larger pitch. However, for smaller pitches, a coherent oscillation volume was observed, and this volume included both the constrictions and extended beyond that region. A local variation in the exchange coupling in the active oscillator region was investigated by placing physical grains in the free magnetic layer, and it was shown to influence both the stable current range and the resulting frequency and output power. De-coupling the oscillators along rows or columns could provide higher power due to more favorable phase shifts between oscillators. Our investigation helps in achieving a deeper understanding of the intrinsic working principles of NC-SHNO arrays and how they reach fully synchronized states, and this will help to expand non-conventional computing capabilities.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Inbäddad systemteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Embedded Systems (hsv//eng)

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