WFRF:(Pettersson Håkan 1962 )
Sökning: WFRF:(Pettersson Håkan 1962 ) > (2001-2004) > Reduced effective t...
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 03258naa a2200433 4500 | |
| 001 | oai:DiVA.org:hh-202 | |
| 003 | SwePub | |
| 008 | 061123s2003 | |||||||||||000 ||eng| | |
| 009 | oai:DiVA.org:liu-59179 | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-2022 URI |
| 024 | 7 | a https://doi.org/10.1007/s00339-003-2200-y2 DOI |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-591792 URI |
| 040 | a (SwePub)hhd (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Fu, Y.u Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Gothenburg University, Göteborg, Sweden4 aut |
| 245 | 1 0 | a Reduced effective temperature of hot electrons in nano-sized metal-oxide-semiconductor field-effect transistors |
| 264 | 1 | a Berlin / Heidelberg :b Springer Berlin/Heidelberg,c 2003 |
| 338 | a print2 rdacarrier | |
| 520 | a Hot electron effects have been extensively studied in metal-oxide-semiconductor field-effect transistors (MOSFETs). The importance of these effects when the dimensions are drastically reduced has so far not been thoroughly investigated. The scope of this paper is therefore to present a detailed study of the effective temperature of excess electrons in nanoscale MOSFETs by solving coupled Schrödinger and Poisson equations. It is found that the increased doping levels and reduced junction depths lead to substantially higher local Fermi levels in the source and drain regions. As a result, the temperature difference between electrons injected into the drain and local electrons is reduced. The scaling of the gate oxide thickness, as well as the drain voltage furthermore reduces the electron temperature in the drain. The detrimental effects of hot electron injection are therefore expected to be decreased by scaling the MOSFET. | |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Annan teknik0 (SwePub)2112 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Other Engineering and Technologies0 (SwePub)2112 hsv//eng |
| 653 | a Electrons | |
| 653 | a Poisson equation | |
| 653 | a Quantum theory | |
| 653 | a Semiconductor junctions | |
| 653 | a Threshold voltage | |
| 653 | a Engineering physics | |
| 653 | a Teknisk fysik | |
| 653 | a TECHNOLOGY | |
| 700 | 1 | a Willander, Magnusu Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Gothenburg University, Göteborg, Sweden4 aut0 (Swepub:liu)magwi72 |
| 700 | 1 | a Pettersson, Håkan,d 1962-u Högskolan i Halmstad,Halmstad Embedded and Intelligent Systems Research (EIS),Halmstad University4 aut0 (Swepub:hh)hape |
| 710 | 2 | a Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Gothenburg University, Göteborg, Swedenb Halmstad Embedded and Intelligent Systems Research (EIS)4 org |
| 773 | 0 | t Applied Physics Ad Berlin / Heidelberg : Springer Berlin/Heidelbergg 77:6, s. 799-803q 77:6<799-803x 0947-8396x 1432-0630 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-202 |
| 856 | 4 8 | u https://doi.org/10.1007/s00339-003-2200-y |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-59179 |
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