WFRF:(Setvín Martin)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02521naa a2200349 4500 | |
| 001 | oai:DiVA.org:liu-16836 | |
| 003 | SwePub | |
| 008 | 090220s2009 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-168362 URI |
| 024 | 7 | a https://doi.org/10.1103/PhysRevB.79.0453042 DOI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Sakamoto, Kazuyukiu Chiba University4 aut |
| 245 | 1 0 | a Electronic structure of the Si(110)-(16×2) surface :b High-resolution ARPES and STM investigation |
| 264 | 1 | c 2009 |
| 338 | a electronic2 rdacarrier | |
| 520 | a The electronic structure of a single domain Si(110)-(16×2) surface has been investigated by high-resolution angle-resolved photoelectron spectroscopy and scanning tunneling microscopy (STM). Four semiconducting surface states with flat dispersions, whose binding energies are 0.2, 0.4, 0.75, and 1.0 eV, were observed in the bulk band gap and more than six states were observed within the projected bulk band at binding energies less than 5.2 eV. The origins of the four surface states and of one state at a binding energy of approximately 1.5 eV at the Γ̅ point are discussed based on the local density of states mappings obtained by STM. Further, a structural model that can explain all these five states is proposed. | |
| 653 | a NATURAL SCIENCES | |
| 653 | a NATURVETENSKAP | |
| 700 | 1 | a Setvin, Martinu National Institute of Material Science, Japan4 aut |
| 700 | 1 | a Mawatari, Kenjiu Tohoku University4 aut |
| 700 | 1 | a Eriksson, Johanu Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan,Yt- och Halvledarfysik, Surface and Semiconductor Physics4 aut0 (Swepub:liu)joher09 |
| 700 | 1 | a Miki, Kazushiu National Institute of Material Science, Japan4 aut |
| 700 | 1 | a Uhrberg, Rogeru Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan,Yt- och Halvledarfysik, Surface and Semiconductor Physics4 aut0 (Swepub:liu)roguh04 |
| 710 | 2 | a Chiba Universityb National Institute of Material Science, Japan4 org |
| 773 | 0 | t Physical Review B. Condensed Matter and Materials Physicsg 79:4, s. 045304-q 79:4<045304-x 1098-0121x 1550-235X |
| 856 | 4 | u https://liu.diva-portal.org/smash/get/diva2:174381/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-16836 |
| 856 | 4 8 | u https://doi.org/10.1103/PhysRevB.79.045304 |
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