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Improvements in Realizing 4H-SiC Thermal Neutron Detectors

Issa, F. (author)
Vervisch, V. (author)
Ottaviani, L. (author)
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Szalkai, D. (author)
Vermeeren, L. (author)
Lyoussi, A. (author)
Kuznetsov, A. (author)
Lazar, M. (author)
Klix, A. (author)
Palais, O. (author)
Hallén, Anders (author)
KTH,Integrerade komponenter och kretsar
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 (creator_code:org_t)
2016-02-03
2016
English.
In: ISRD 15 - INTERNATIONAL SYMPOSIUM ON REACTOR DOSIMETRY. - : EDP Sciences. - 9782759819294
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of B-10 inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted B-10 thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

Subject headings

MEDICIN OCH HÄLSOVETENSKAP  -- Medicinsk bioteknologi -- Biomaterialvetenskap (hsv//swe)
MEDICAL AND HEALTH SCIENCES  -- Medical Biotechnology -- Biomaterials Science (hsv//eng)

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