A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier in German Microwave Conference Digest of Papers, GeMIC 2010, vol , issue , pp 276-279

Khan, H.R. (author): Electronic Engineering Department, NED University of Engineering and Technology, Karachi, Pakistan

Wahab, Q. (author): Electronic Engineering Department, NED University of Engineering and Technology, Karachi, Pakistan

Fritzin, Jonas (author): Linköpings universitet,Elektroniska komponenter,Tekniska högskolan

Alvandpour, Atila (author): Linköpings universitet,Elektroniska komponenter,Tekniska högskolan

Wahab, Qamar (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

(creator_code:org_t)

2010
2010
English.
In: German Microwave Conference Digest of Papers, GeMIC 2010. ; , s. 276-279

Abstract Subject headings

A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 O load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.

By the author/editor: Khan, H.R.; Wahab, Q.; Fritzin, Jonas; Alvandpour, Atil ...; Wahab, Qamar

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