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Impurity resistivit...
Impurity resistivity of the double-donor system Si : P,Bi
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- da Silva, AF (författare)
- Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA
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- Sernelius, Bo (författare)
- Linköpings universitet,Tekniska högskolan,Teoretisk Fysik
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- de Souza, JP (författare)
- Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA
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visa fler...
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- Boudinov, H (författare)
- Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA
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Zheng, HR (författare)
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- Sarachik, MP (författare)
- Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA
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visa färre...
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(creator_code:org_t)
- 1999
- 1999
- Engelska.
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 60:23, s. 15824-15828
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi. [S0163-1829(99)11747-8].
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