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Sökning: id:"swepub:oai:DiVA.org:hh-37448" > Electro-optical cha...

LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003441naa a2200481 4500
001oai:DiVA.org:hh-37448
003SwePub
008180829s2012 | |||||||||||000 ||eng|
024a https://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-374482 URI
024a https://doi.org/10.4304/jcm.7.11.808-8202 DOI
040 a (SwePub)hh
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
100a Amin, Muhammed Nurulu Högskolan i Halmstad,Akademin för informationsteknologi,amin_m154@yahoo.com4 aut
2451 0a Electro-optical characterisation of inp nanowire based p-n, p-i-n infrared photodetectors
264 c 2012-11-01
264 1a Rowland Heights, CA :b Engineering and Technology Publishing,c 2012
338 a print2 rdacarrier
520 a High speed photodetectors are most sophisticated optoelectronic devices, because it has high photo sensitivity, low noise, high conversion efficiency and allow a large wavelength range of detection from 750 nm to 1.3-1.55 pm in the optical communication system. These photodetector is used as an optical receiver which transforms the energy of optical radiation such as infrared, visible or ultraviolet into the electrical signal that is convenient for measurement. Since the last decade, the electro-optical characterisation of photodetectors has been investigated to improve their performance and price. In this paper, we are going to discuss the characterisation of the two different type infrared photodectors based on nanowire that we have worked on our project. One photodetector is p- n nanowire structure, and another is p-i-n structure. Both photodetectors is worked based on internal photoelectric effect and on the theory of p-n junction. We investigated the detector performance at 77K-300K temperature corresponding with wavelength in darkness and under illumination as regarding breakdown voltage, sensitivity, and quantum efficiency. We have also compared the differences between the two photodetectors performance characteristics. © 2012 ACADEMY PUBLISHER.
650 7a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe
650 7a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng
653 a High conversion efficiency
653 a High speed photodetectors
653 a InP
653 a Internal photoelectric effect
653 a IR photodetectors
653 a Large wavelength range
653 a NWs
653 a Performance characteristics
653 a Bit error rate
653 a Nanowires
653 a Optoelectronic devices
653 a Photodetectors
653 a Semiconductor junctions
653 a Signal to noise ratio
653 a Photons
700a Alam, Md. Obaidulu Högskolan i Halmstad,Akademin för informationsteknologi,obai_aust@yahoo.com4 aut
710a Högskolan i Halmstadb Akademin för informationsteknologi4 org
773t Journal of Communicationsd Rowland Heights, CA : Engineering and Technology Publishingg 7:11, s. 808-820q 7:11<808-820x 1796-2021x 2374-4367
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-37448
8564 8u https://doi.org/10.4304/jcm.7.11.808-820

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