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Advances in wide bandgap SiC for optoelectronics
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- Ou, Haiyan (author)
- Technical University of Denmark, Lyngby, Denmark
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- Ou, Yiyu (author)
- Technical University of Denmark, Lyngby, Denmark
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- Argyraki, Aikaterini (author)
- Technical University of Denmark, Lyngby, Denmark
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- (creator_code:org_t)
- 2014-03-10
- 2014
- English.
- In: European Physical Journal B. - : Springer Science and Business Media LLC. - 1434-6028 .- 1434-6036. ; 87:3, s. 58-
- Journal article (peer-reviewed)
Abstract
Subject headings
Close
- Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the polycrystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Chemical-Vapor-Deposition
- Antireflective Subwavelength Structures
- Sublimation Sandwich Method
- Silicon-Carbide Surface
- Acceptor-Pair Emission
- Light-Emitting Diode
- Epitaxial-Growth
- Broad-Band
- Layers
- Transport
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Ou, Haiyan
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- Argyraki, Aikate ...
- Schimmel, Saskia
- Kaiser, Michl
- Wellmann, Peter
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- About the subject
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- NATURAL SCIENCES
- NATURAL SCIENCES
- and Physical Science ...
- Articles in the publication
- European Physica ...
- By the university
- Royal Institute of Technology
- Linköping University
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