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Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
- Bethge, O. (author)
- Zimmermann, C. (author)
- Lutzer, B. (author)
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- Simsek, S. (author)
- Smoliner, J. (author)
- Stoeger-Pollach, M. (author)
- Bertagnolli, E. (author)
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- (creator_code:org_t)
- AIP Publishing, 2014
- 2014
- English.
- In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 116:21, s. 214111-
- Journal article (peer-reviewed)
Abstract
Subject headings
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- The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl) yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 x 10(11) eV(-1) cm(-2) were achieved by oxygen annealing at high temperatures (550 degrees C-600 degrees C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Annealing
- Atomic layer deposition
- Charge coupled devices
- Deposition
- Germanium
- Interfaces (materials)
- MOS devices
- Oxygen
- Yttrium
- Yttrium alloys
- Yttrium oxide
- Ge substrates
- High temperature
- Interface quality
- Interface trap density
- Metal-oxide-semiconductor capacitors
- Oxygen annealing
- Post deposition annealing
- Situ x-ray photoelectron spectroscopy
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Bethge, O.
- Zimmermann, C.
- Lutzer, B.
- Simsek, S.
- Smoliner, J.
- Stoeger-Pollach, ...
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- Bertagnolli, E.
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- Royal Institute of Technology
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