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Wurtzite silicon as...
Wurtzite silicon as a potential absorber in photovoltaics : Tailoring the optical absorption by applying strain
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Roedl, C. (author)
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Sander, T. (author)
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Bechstedt, F. (author)
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Vidal, J. (author)
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- Olsson, Pär (author)
- KTH,Reaktorfysik,CNRS, Chim ParisTech, France
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Laribi, S. (author)
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Guillemoles, J. -F (author)
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(creator_code:org_t)
- 2015
- 2015
- English.
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 92:4
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We present ab initio calculations of the electronic structure and the optical properties of wurtzite Si (Si-IV). We find an indirect band gap of 0.95 eV (Gamma(5) -> M-1) and an optically forbidden direct gap of 1.63 eV (Gamma(5) -> Gamma(10)), which is due to a backfolding of the L-1 state of Si in the diamond structure (Si-I). Optical absorption spectra including excitonic and local-field effects are calculated. Further, the effects of hydrostatic pressure, uniaxial strain, and biaxial strain on the absorption properties are investigated. Biaxial tensile strains enhance the optical absorption of Si-IV in the spectral range which is relevant for photovoltaic applications. High biaxial tensile strains (>4%) even transform Si-IV into a direct semiconductor.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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