Wurtzite silicon as a potential absorber in photovoltaics: Tailoring the optical absorption by applying strain

Wurtzite silicon as a potential absorber in photovoltaics : Tailoring the optical absorption by applying strain

Roedl, C. (author)

Sander, T. (author)

Bechstedt, F. (author)

Vidal, J. (author)

Laribi, S. (author)

Guillemoles, J. -F (author)

(creator_code:org_t)

2015
2015
English.
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 92:4

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

We present ab initio calculations of the electronic structure and the optical properties of wurtzite Si (Si-IV). We find an indirect band gap of 0.95 eV (Gamma(5) -> M-1) and an optically forbidden direct gap of 1.63 eV (Gamma(5) -> Gamma(10)), which is due to a backfolding of the L-1 state of Si in the diamond structure (Si-I). Optical absorption spectra including excitonic and local-field effects are calculated. Further, the effects of hydrostatic pressure, uniaxial strain, and biaxial strain on the absorption properties are investigated. Biaxial tensile strains enhance the optical absorption of Si-IV in the spectral range which is relevant for photovoltaic applications. High biaxial tensile strains (>4%) even transform Si-IV into a direct semiconductor.

By the author/editor: Roedl, C.; Sander, T.; Bechstedt, F.; Vidal, J.; Olsson, Pär; Laribi, S.; show more...; Guillemoles, J. ...; show less...

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