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Ab initio study of energy band structures of GaAs nanoclusters
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- Jiang, Jun (author)
- KTH,Teoretisk kemi
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- Gao, Bin (author)
- KTH,Teoretisk kemi
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- Han, Tiantian (author)
- KTH,Teoretisk kemi
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- (creator_code:org_t)
- AIP Publishing, 2009
- 2009
- English.
- In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 94:9
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Electronic states and optical transitions of hydrogen terminated GaAs nanoclusters up to 16.9 nm in diameter were studied using a large-scale quantum chemistry approach called central insertion scheme by which the quantum confinement effect is shown to quantitatively agree with experimental results. The ab initio study further reveals that the effective mass of the conduction-band electron (valence-band hole) in the GaAs nanocluster is larger (smaller) than the bulk material value.
Keyword
- ab initio calculations
- conduction bands
- effective mass
- gallium
- arsenide
- III-V semiconductors
- nanostructured materials
- electronic states
- laser-ablation
- quantum dots
- nanocrystals
- nanoparticles
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Jiang, Jun
- Gao, Bin
- Han, Tiantian
- Fu, Ying
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- Royal Institute of Technology
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