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Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers

Liu, Z. L. (author)
Mei, Z. X. (author)
Zhang, T. C. (author)
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Liu, Y. P. (author)
Guo, Y. (author)
Du, X. L. (author)
Hallén, Anders. (author)
KTH,Mikroelektronik och Informationsteknik, IMIT
Zhu, J. J. (author)
Kuznetsov, A. Yu (author)
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 (creator_code:org_t)
Elsevier BV, 2009
2009
English.
In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 311:18, s. 4356-4359
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on Al2O3 substrates. Importantly, a low Mg content "quasi-homo" buffer, Mg0.17Zn0.83O, was applied to accommodate a host of structural discrepancies and therefore, avoiding phase separation in a high Mg content film, Mg0.55Zn0.45O, as proved by X-ray diffraction. The Mg fraction in the overgrown single-phase epilayer, Mg0.55Zn0.45O, was confirmed by Rutherford backscattering spectrometry.

Keyword

Phase separation
Solar-blind
Molecular beam epitaxy
MgZnO
ZnO
ultraviolet photodetectors
mgxzn1-xo
heterostructures
alloys

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art (subject category)

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