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Solar-blind 4.55 eV...
Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers
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Liu, Z. L. (author)
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Mei, Z. X. (author)
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Zhang, T. C. (author)
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Liu, Y. P. (author)
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Guo, Y. (author)
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Du, X. L. (author)
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- Hallén, Anders. (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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Zhu, J. J. (author)
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Kuznetsov, A. Yu (author)
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(creator_code:org_t)
- Elsevier BV, 2009
- 2009
- English.
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 311:18, s. 4356-4359
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on Al2O3 substrates. Importantly, a low Mg content "quasi-homo" buffer, Mg0.17Zn0.83O, was applied to accommodate a host of structural discrepancies and therefore, avoiding phase separation in a high Mg content film, Mg0.55Zn0.45O, as proved by X-ray diffraction. The Mg fraction in the overgrown single-phase epilayer, Mg0.55Zn0.45O, was confirmed by Rutherford backscattering spectrometry.
Keyword
- Phase separation
- Solar-blind
- Molecular beam epitaxy
- MgZnO
- ZnO
- ultraviolet photodetectors
- mgxzn1-xo
- heterostructures
- alloys
Publication and Content Type
- ref (subject category)
- art (subject category)
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