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Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe
- Soderstrom, D. (author)
-
- Lourdudoss, Sebastian (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
- Dadgar, A. (author)
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- Stenzel, O. (author)
- Bimberg, D. (author)
- Schumann, H. (author)
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- (creator_code:org_t)
- 2001
- 2001
- English.
- In: Journal of Electronic Materials. - 0361-5235 .- 1543-186X. ; 30:8, s. 972-976
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Semi-insulating Fe and Ru codoped InP epitaxial layers grown by low-pressure hydride vapor phase epitaxy have been investigated. InP:Ru and InP:Fe,Ru layers were grown on p-InP:Zn and n-InP:S substrates, in order to study dopant diffusion and electrical characteristics. Dopant diffusion profiles of Ru, Fe and Zn were measured by secondary ion mass spectroscopy. A small but noteworthy diffusion front is observed when InP:Ru is adjacent to InP:Zn, but not when adjacent to n-InP. For InP:Fe codoped with Ru a pronounced interdiffusion of Fe and Zn is observed for Ru concentrations less than 2 X 10(17) cm(-3), but, for a higher Ru concentration the interdiffusion is clearly suppressed. Moreover, when InP is codoped with Fe and Ru, the small diffusion tail of Ru in InP:Zn vanishes. Unlike InP:Fe, resistivities above 1 X 10(8) Ohm cm are measured for both electron and hole-current injection in InP:Fe,Ru.
Keyword
- InP : Fe
- Ru
- dopant diffusion
- low-pressure hydride VPE
- chemical-vapor-deposition
- phase epitaxy
- iron
- layers
- zn
Publication and Content Type
- ref (subject category)
- art (subject category)
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