Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

Linnarsson, Margareta K. (author): KTH,Mikroelektronik och informationsteknik, IMIT,Royal Institute of Technology, Solid State Electronics, P. O. Box E229, SE-164 40 Kista-Stockholm, Sweden

Janson, M. S. (author): Royal Institute of Technology, Solid State Electronics, P. O. Box E229, SE-164 40 Kista-Stockholm, Sweden

Zimmermann, U. (author): Royal Institute of Technology, Solid State Electronics, P. O. Box E229, SE-164 40 Kista-Stockholm, Sweden

Svensson, B. G. (author): Royal Institute of Technology, Solid State Electronics, P. O. Box E229, SE-164 40 Kista-Stockholm, Sweden, Oslo University, Physical Electronics, Department of Physics, P. B. 1048 Blindern, N-0316 Oslo, Norway

Persson, Per (author): Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik

Hultman, Lars (author): Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik

Wong-Leung, J. (author): Australian National University, Dept. of Electronics Mat. Eng., Res. Sch. of Phys. Sci. and Eng., Canberra, ACT 0200, Australia

Karlsson, S. (author): ACREO AB, P. O. Box E236, SE-164 40 Kista-Stockholm, Sweden

Schoner, A. (author): Schöner, A., ACREO AB, P. O. Box E236, SE-164 40 Kista-Stockholm, Sweden

Bleichner, H. (author): ABB Corporate Research, P. O. Box E215, SE-164 40 Kista-Stockholm, Sweden

Olsson, E. (author): Ångström Laboratory, Analytical Material Physics, SE-751 21 Uppsala, Sweden

(creator_code:org_t)

AIP Publishing, 2001
2001
English.
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:13, s. 2016-2018

Related links:: https://openresearch...; show more...; https://urn.kb.se/re...; https://doi.org/10.1...; https://urn.kb.se/re...; show less...

Abstract Subject headings

Heavily Al-doped 4H-SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500 degreesC and 2000 degreesC for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy (TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of similar to 2x10(20) Al/cm(3) (1900 degreesC) is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700 degreesC or above when the Al concentration exceeds 2x10(20) cm(-3). Al-containing precipitates are identified by energy-filtered TEM.

By the author/editor: Linnarsson, Marg ...; Janson, M. S.; Zimmermann, U.; Svensson, B. G.; Persson, Per; Hultman, Lars; show more...; Wong-Leung, J.; Karlsson, S.; Schoner, A.; Bleichner, H.; Olsson, E.; show less...

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