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Thermodynamic equilibration of the carbon vacancy in 4H-SiC : A lifetime limiting defect

Ayedh, H. M. (author)
Nipoti, R. (author)
Hallén, Anders (author)
KTH,Integrerade komponenter och kretsar
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Svensson, B. G. (author)
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 (creator_code:org_t)
American Institute of Physics (AIP), 2017
2017
English.
In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 122:2
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The carbon vacancy (V-C) is a prominent defect in as-grown 4H-SiC epitaxial layers for high power bipolar devices. V-C is electrically active with several deep levels in the bandgap, and it is an efficient "killer" of the minority carrier lifetime in n-type layers, limiting device performance. In this study, we provide new insight into the equilibration kinetics of the thermodynamic processes governing the V-C concentration and how these processes can be tailored. A slow cooling rate after heat treatment at similar to 2000 degrees C, typically employed to activate dopants in 4H-SiC, is shown to yield a strong reduction of the V-C concentration relative to that for a fast rate. Further, post-growth heat treatment of epitaxial layers has been conducted over a wide temperature range (800-1600 degrees C) under C-rich surface conditions. It is found that the thermodynamic equilibration of V-C at 1500 degrees C requires a duration less than 1 h resulting in a V-C concentration of only similar to 10(11) cm(-3), which is, indeed, beneficial for high voltage devices. In order to elucidate the physical processes controlling the equilibration of V-C, a defect kinetics model is put forward. The model assumes Frenkel pair generation, injection of carbon interstitials (C-i's) from the C-rich surface (followed by recombination with V-C's), and diffusion of V-C's towards the surface as the major processes during the equilibration, and it exhibits good quantitative agreement with experiment.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

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Ayedh, H. M.
Nipoti, R.
Hallén, Anders
Svensson, B. G.
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NATURAL SCIENCES
NATURAL SCIENCES
and Physical Science ...
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Journal of Appli ...
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Royal Institute of Technology

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