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Relaxation-Free and Inertial Switching in Synthetic Antiferromagnets Subject to Super-Resonant Excitation
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- Koop, Björn, 1987- (author)
- KTH,Nanostrukturfysik
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- Descamps, Thomas (author)
- KTH
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- Holmgren, Erik (author)
- KTH,Nanostrukturfysik
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- (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2017
- 2017
- English.
- In: IEEE transactions on magnetics. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9464 .- 1941-0069. ; 53:11
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. In this paper, we propose a method for how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane picosecondrange magnetic-field pulses. Our detailed micromagnetic simulations, supported by analytical results, yield the parameter space where inertial switching and relaxation-free switching can be achieved in the system. We furthermore discuss the advantages of dynamic switching in synthetic antiferromagnets and, specifically, their relatively low-power switching as compared with that in single ferromagnetic particles. Finally, we show how the excitation of spin waves in the system can be used to significantly reduce the post-switching spin oscillations for practical device geometries.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Magnetization dynamics
- synthetic antiferromagnets
- ultrafast switching
Publication and Content Type
- ref (subject category)
- art (subject category)
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