id:"swepub:oai:DiVA.org:kth-22141"
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02564naa a2200517 4500 | |
| 001 | oai:DiVA.org:kth-22141 | |
| 003 | SwePub | |
| 008 | 100810s2002 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-221412 URI |
| 024 | 7 | a https://doi.org/10.1109/TNS.2002.8060182 DOI |
| 040 | a (SwePub)kth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Leon, R.4 aut |
| 245 | 1 0 | a Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots |
| 264 | 1 | c 2002 |
| 338 | a print2 rdacarrier | |
| 500 | a QC 20100525 | |
| 520 | a The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3-D) quantum confinement.. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAS/AlGaAS), QD surface density (4 x 10(8) to 3 x 10(10) cm(-2)), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects. | |
| 653 | a carrier dynamics | |
| 653 | a compound semiconductors | |
| 653 | a displacement damage | |
| 653 | a photoluminescence | |
| 653 | a Stranski-Krastanow quantum dots | |
| 653 | a enhanced radiation hardness | |
| 653 | a light-emitting-diodes | |
| 653 | a deep levels | |
| 653 | a gaas | |
| 653 | a damage | |
| 653 | a lasers | |
| 653 | a transformation | |
| 653 | a dependence | |
| 653 | a wells | |
| 653 | a degradation | |
| 700 | 1 | a Marcinkevicius, Sauliusu KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u16tz6ld |
| 700 | 1 | a Siegert, J.4 aut |
| 700 | 1 | a Cechavicius, B.4 aut |
| 700 | 1 | a Magness, B.4 aut |
| 700 | 1 | a Taylor, W.4 aut |
| 700 | 1 | a Lobo, C.4 aut |
| 710 | 2 | a KTHb Mikroelektronik och informationsteknik, IMIT4 org |
| 773 | 0 | t IEEE Transactions on Nuclear Scienceg 49:6, s. 2844-2851q 49:6<2844-2851x 0018-9499x 1558-1578 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-22141 |
| 856 | 4 8 | u https://doi.org/10.1109/TNS.2002.806018 |
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