A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 degrees C

Zetterling, Carl-Mikael, 1966- (author): KTH,Integrerade komponenter och kretsar

(creator_code:org_t)

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2020
2020
English.
In: IEEE Journal of the Electron Devices Society. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 2168-6734. ; 8:1, s. 116-121

Related links:: https://doi.org/10.1...; show more...; https://urn.kb.se/re...; https://doi.org/10.1...; show less...

Abstract Subject headings

An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and digital electronic circuits must be addressed. Here, we demonstrate a novel SiC image sensor based on our in-house bipolar technology. The sensing part has 256 ( $16\times 16$ ) pixels. The digital circuit part for row and column selection contains two 4-to-16 decoders and one 8-bit counter. The digital circuits are designed in transistor-transistor logic (TTL). The entire circuit has 1959 transistors. It is the first demonstration of SiC opto-electronic on-chip integration. The function of the image sensor up to 400 degrees C has been verified by taking photos of the spatial patterns masked from UV light. The image sensor would play a significant role in UV photography, which has important applications in astronomy, clinics, combustion detection and art.

By the author/editor: Hou, Shuoben; Shakir, Muhammad; Hellström, Per-E ...; Malm, B. Gunnar, ...; Zetterling, Carl ...; Östling, Mikael

About the subject

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