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1260 nm InGaAs vert...
1260 nm InGaAs vertical-cavity lasers
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- Asplund, Carl (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Sundgren, Petrus (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Mogg, Sebastian (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Hammar, Mattias (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Christiansson, Ulf (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Oscarsson, V. (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Runnström, C. (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Odling, E. (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Malmquist, J. (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- Institution of Engineering and Technology (IET), 2002
- 2002
- English.
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In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 38:13, s. 635-636
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
Close
- The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is in the low mA-regime while the maximum output power exceeds 1 mW. The devices work continuous-wave over a wide temperature range of at least 10-120degrees C.
Keyword
- Continuous wave lasers; Electric currents; Integrated circuit layout; Laser tuning; Light emission; Metallorganic vapor phase epitaxy; Semiconducting indium gallium arsenide
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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