Bulk and surface electronic structure of InAs(110)

Andersson, C B M (author)

Andersen, J N (author)

Persson, P E S (author)

Karlsson, Ulf O (author): KTH,Skolan för informations- och kommunikationsteknik (ICT),materialfysik

(creator_code:org_t)

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

The InAs(110) cleavage surface has been investigated by angle-resolved photoelectron spectroscopy. A separation between the In 4d(5/2) bulk component and the valence band maximum of 16.8 eV is found to be consistent with normal emission spectra. Experimental energy band dispersions, E-i(k), for the four bulk valence bands are established along the Sigma-line of the bulk Brillouin zone. A bulk band structure calculation utilizing the augmented plane-wave method is made. The experimental and calculated E-i(k) dispersions are found to be in good agreement with each other. E-i(k(parallel to)) dispersions for two surface-related structures are established along the lines <(Gamma)over bar>-(M) over bar and (Y) over bar-(M) over bar of the surface Brillouin zone. (C) 1998 Elsevier Science B.V.

By the author/editor: Andersson, C B M; Andersen, J N; Persson, P E S; Karlsson, Ulf O

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.