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Measurements and si...
Measurements and simulations of self-heating and switching with 4H-SIC power BJTs
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- Domeij, Martin (författare)
- KTH,Integrerade komponenter och kretsar
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Danielsson, Erik (författare)
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Liu, W. (författare)
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Zimmermann, U. (författare)
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- Zetterling, Carl-Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- Cambridge, 2003
- 2003
- Engelska.
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Ingår i: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). - Cambridge. ; , s. 375-378
- Relaterad länk:
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http://www.scopus.co...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Transient measurements and device simulations were performed to investigate self-heating and switching with 4H-SiC BJTs. A current gain decrease was found during self-heating presumably due to reduced electron mobility with increasing temperature. Surface recombination increased the simulated maximum temperature but the current gain decrease during self-heating was similar as for bulk recombination. A fast switching of 0.5 A and 200 V was shown with a voltage rise-time of about 70 ns and fall-time of 50 ns. Turn-off measurements show a noticeable delay time before fall-off of the emitter current, indicating a significant amount of stored carriers in the base.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Charge carriers
- Computer simulation
- Electron mobility
- Silicon carbide
- Inductive load switching
- Heterojunction bipolar transistors
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)