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High-power InGaAs/GaAs 1.3 μm VCSELs based on novel electrical confinement scheme
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- Marcks von Würtemberg, Rickard (author)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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- Berggren, Jesper (author)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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- Dainese, Matteo (author)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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- (creator_code:org_t)
- Institution of Engineering and Technology (IET), 2008
- 2008
- English.
- In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 44:6, s. 414-416
- Journal article (peer-reviewed)
Abstract
Subject headings
Close
- Reported are 1.3 mu m InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 mu m large devices.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Epitaxial growth; Lithography; Semiconducting indium gallium arsenide; Cavity region; Differential efficiency; Electrical confinement scheme
- Semiconductor physics
- Halvledarfysik
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Royal Institute of Technology
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