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Detailed studies of...
Detailed studies of graphene grown on C-face SiC
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- I Johansson, Leif (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Watcharinyanon, Somsakul (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Zakharov, A.A. (author)
- MAX-lab, Lund University, S-22100 Lund, Sweden
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- Iakimov, Tihomir (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Virojanadara, Chariya (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 2012
- 2012
- English.
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In: Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. ; , s. 200-202
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
Close
- Graphene samples were grown on the C-face of SiC, at high temperature in a furnace and an Ar ambient, and were investigated using LEEM, XPEEM, LEED, XPS and ARPES. Formation of fairly large grains (crystallographic domains) of graphene exhibiting sharp (1x1) patterns in μ-LEED was revealed and that different grains showed different azimuthal orientations. Selective area constant initial energy photoelectron angular distribution patterns recorded showed the same results, ordered grains and no rotational disorder between adjacent layers. A grain size of up to a few μm was obtained on some samples.
Keyword
- μ-LEED and ARPES; C-face SiC; Graphene; LEEM; Ordered grains; XPEEM
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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